[Chairs] D. W.
Moon (KRISS, Korea), S. Tanuma (Japan Energy Corp., Japan)
08:30
Opening Addresses
D.W. Moon (KRISS, Korea), K. Yoshihara (NRIM, Japan)
08:40
[01] Invited: A Novel Approach for Atomic Level Characterization by JSPS-Super
Electron Microscope
R.
Shimizu (Osaka Inst. Technol., Japan)
09:10
[02] Reactive ion scattering study of chemistry on ice: frozen HCl and NH3
S.-C.
Park, K.-W. Maeng, and H. Kang (Pohang Univ. Sci. Technol., Korea)
09:30
[03] Metrological Cylindrical Mirror Analyzer : Ghost Spectra and Rubbish
Electrons in AES
K.
Goto (Nagoya Inst. Technol., Japan), and N. N. Rahman
09:50
[04] Fermi level movements of GaN covered by transition metal films: what
determines its position?
J.
M. Seo (Chonbuk Nat'l Univ., Korea), C. Y. Kim, J. H. Kim, and H. J. Kang
10:10
[05] Work Function Measurement and its Applications using a Scanning Auger
Microscope
M.
Kudo (JEOL Ltd., Japan), Y. Sakai, and T. Ichinokawa
10:30 Coffee Break
[Chairs] H. Kang (Pohang Univ. Sci.
Technol, Korea), K. Goto (Nagoya Inst. Technol., Japan)
10:50
[06] A study of Al2O3 thin films by X-ray Induced Electron Emission
Spectroscopy (XIEES)
J.
C. Lee (SAIT, Korea), S. A. Song, Y. Yuryev, and C. B. Lim
11:10
[07] Adsorption and decomposition of triethylindium (TEI) on a GaP(001)-(2x1)
surface studied by LEED, STM, TPD, and HREELS
Y.
Fukuda (Shizuoka Univ., Japan), T. Kobayashi, T. Sekizawa, S. Mochizuki, and N.
Sanada
11:30
[08] Characterization of NO Oxynitride Films by XPS with Chemical Profiling
I.
S. Choi (HEI, Korea), H. J. Kim, and S. Y. Lee
11:50
[09] EPMA Line Analysis of Chemical States for Chromium by LLS Calculation for
Characteristic X-rays Spectra
S.
Hashimoto (Kokan Keisoku, Japan), Y. Kitahara, Y. Tsuchiya, and T. Nishuimura
12:10 Lunch
[Chairs] J. M. Seo (Chonbuk Nat'l Univ.,
Korea), K. Yoshihara (Nat'l Res. Inst. Metals, Japan)
13:30
[10] Measurements of Sputter Depth using a Metallic Mesh and Application to
Actual Specimens
K.
Mogi (NTT-AT, Japan) and M. Suzuki
13:50
[11] Characterization of SrBi2Ta2O9 Film with X-ray Photoelectron Spectroscopy
K.
Y. Min (HEI, Korea)
14:10
[12] Comparative Study on Depth Resolution in Secondary Ion Mass Spectrometry
and Sputtered Neutral Mass Spectrometry
Y.
Higashi (NTT-AT, Japan) and A. Takano
14:30
[13] PZT surface deformation by energetic Ar+ ion sputtering
J.
M. Choi (SAIT, Korea), D. H. Oh, H. I. Lee, S. H. Baik, and D. W. Moon
14:50 Coffee Break
15:10
[14] Experimental Estimation of Electron Effective Attenuation Lengths using
Synchrotron Radiation in Silicon Dioxide Films
M.
Suzuki (NTT-AT, Japan), H. Shimada, S. Tanuma, and C. J. Powell
15:30
[15] Development of delta doped multilayers in Si for SIMS shallow junction
analysis
D.
W. Moon (KRISS, Korea), K. J. Kim, and H. J. Kim
15:50
[16] XPS Studies of Electrode Surface of Fuel Cell
Y.
Iijima (JEOL Ltd., Japan), T. Tazawa, and N. Furuya
16:10
[17] Quantitative Analysis on the Surface Structure of Ultrathin Al2O3 Films on
Metal Substrates
M.
B. Lee (Kyungpook Nat'l Univ., Korea), J. H. Lee, J. H. Lee, and N. V.
Richardson
16:30 Coffee Break
[Chairs]
Y. H. Lee (KIST, Korea), M. Inoue (Setsunan Univ., Japan)
16:50
[18] Non-destructive depth profile analysis by high-energy synchrotron-
radiation XPS
H.
Yamamoto (JAERI, Japan) and Y. Baba
17:10
[19] Surface Characterization of Ion Beam-Treated Polymers
Y.
H. Lee (KIST, Korea), S. H. Han, H. E. Lim, H. S. Jung, J. H. Cho, and Y. W.
17:30
[20] Charge compensation of X-ray Photoelectron Spectroscopy for Composite
Materials
Y.
Mori (NGK Insulators Ltd., Japan)
17:50
[21] Development of Boron-Doped Silicon Thin Film as a Reference Material for
SIMS Quantification
K.
J. Kim (KRISS, Korea), H. K. Kim, D. W. Moon, and C. J. Park
18:10
[22] Sputter Etching Rate Database (SERD) Project of SASJ
M.
Inoue (Setsunan Univ.) and SERD project group of SASJ
19:00 Banquet (Symposium Reception)
[Chairs] Y. S. Park (KRISS, Korea), M.
Suzuki (NTT-AT, Japan)
08:30
[23] Measurements of Electron Inelastic Mean Free Paths in Several Elemental
Solids.
S.
Tanuma (Japan Energy Corp., Japan), M. Suzuki, S. Ichimura, and K. Goto
08:50
[24] The in-depth distribution of argon in Si surface after 3kev Ar+ ion
bombardment
H.
J. Kang (Chungbuk Nat'l Univ., Korea), D.W. Oh, H. I. Lee, and D.W. Moon
09:10
[25] Characterization for SiO2/Si and silicide/Si interface by X-ray
photoelectron spectroscopy with difference method
T.
Ohama (Hiroshima Inst. Technol., Japan), T. Tanaka, and K. Kawabata
09:30
[26] Characterization of Pd-Ga alloys by synchrotron-radiation
Y.
S. Lee (Taejon Nat'l Univ. Technol., Korea), J. H. Kim, J. H. Kim, H. J. Kim,
and C. N. Whang
09:50
[27] Silicide Formation Process for Source-Drain Depending on Silicon Substrate
Types in Advanced CMOS Logic Devices
M.
Nakamura (Fujitsu Ltd., Japan), Atsuo Fushida, and T. Iikawa
10:10
[28] Preferential Sputtering of Various Tungsten Silicides Studied by XPS and
MEIS
Y.
Park (KRISS, Korea), I. Y. Hwang, H. I. Lee, K. J. Kim, and D. W. Moon
10:30 Coffee Break
[Chairs] J. W. Lee (Hallym Univ., Korea),
M. Nakamura (Fujitsu Ltd., Japan)
10:50
[29] Discussions for Pulse Counting using Poissons Statistics
A.
Tanaka (ULVAC-PHI Inc., Japan)
11:10
[30] Effect of fluoride layer insertion on the electronic structures of Al/Alq3
interfaces studied by photoelectron spectroscopy
D.
Y. Kim (Hallym Univ., Korea) and Y. Park
11:30
[31] Thickness Measurement of Native Oxide Layer on the Polycrystal Silicon
exposed to the Air for Three Years
K.
Yanagiuchi (TDK Corp., Japan)
11:50
[32] XPS studies of ion bombarded polymer surfaces
J.
W. Lee (Hallym Univ., Korea) and T. H. Kim
12:10 Closing Remark
J.
W. Lee (Hallym Univ., Korea)
12:20 Lunch
14:00 Excursion (Symposium Tour to
Pulguksa and Sokkuram)