Proceedings of PSA 98 (1998) Part 1
Importance of VAMAS and ISO in Developing Reference Standards and Documentary Standards for Practical Surface Analysis
C. J. Powell and R. Shimizu・・・・1
New Aspects in Quantitative Surface Analysis
M. P. Seah・・・・7
Development and Characterization of Thin Film Reference Materials
W. Gaarenstroom・・・・12
Anomalous Boron Depth Profile in Si Wafer with High Dose Ion Implantation
S. Hayashi, Y. Okamoto, Y. Homma, F. Toujou, M. Kimura, G. Shigesato, K. Tanaka,and M. Fujinami・・・・18
Preparatio of SiO2/Si Multilayer Thin Film and its Usage as a Standard Reference Material forDepth Profiling
I. Kojima, N. Fukumoto, T. Fujimoto, B. Q. Li, and H. Takaya・・・・22
Stylus Profilometer Round-Robin Study for Depth Measurements
Y. Okamoto, Y. Homma, A. Yamamoto, S. Hayashi, F. Toujou, N. Isomura, K. Mikami, I. Nomachi, S. Seo, M. Tomita, K. Handa, S. Ichikawa, Y. Kawashima, R. Mimori, Y. Mitsuoka, I. Tachikawa, T. Toyoda, and Y. Ueki・・・・26
SIMS Round-Robin Study of Depth Profiling of Boron Implants in Silicon
F. Toujou, Y.Okamoto, S. Hayashi, Y. Homma, N. Isomura, A. Mikami, I. Nomachi, S. Seo, M. Tomita, A. Yamamoto, S. Ichikawa, Y. Kawashima, R. Mimori, Y. Mitsuoka, I. Tachikawa, T. Toyoda, and Y. Ueki・・・・30
Influence of Surface Excitations on Quantitative Analysis in Electron Spectroscopy
Y. -F. Chen・・・・34
The MRI-model in COMPRO5: A New Data Processing Software for the Quantitative Evaluation of Sputter Depth Profiles
Hofmann and K. Yoshihara・・・・40
Depth Profiling of GaAs/AlAs Multilayers: Dependence of the Depth Resolution Parameters on the Sputtering Conditions
A. Rar, S. Hofmann, K. Yoshihara, and K. Kajiwara・・・・44
Determinations of IMFPs for 50 - 5000 eV in Copper with Absolute Elastic Scattering Electron Spectroscopy
S. Tanuma, S. Ichimura, and K. Goto・・・・48
Secondary Ion Emission from Alkali/Si Systems
T. Kan, K. Mitsukawa, T. Ueyama, M. Takada, T. Yasue, and T. Koshikawa・・・・52
Remote Electron Microscope
K. Ikeda, T. Toriyama, M. Tomita, and M. Watanabe・・・・56
A Statistical Approach to the Automated AES/XPS Qualitative Analysis
Y. Nagatsuka, K. Yoshida, Y. Nagasawa and Y. Ono・・・・60
Principles of Multivariate Analysis with Emphasis on Factor Analysis
D. Watson・・・・64
KLL Auger Spectra of 3d Transition Metals (Cu, Ni) and Their Alloys
L. Kover, D. Varga, I. Cserny, J. Toth, and Zs. Kovacs・・・・74
An Interpretation of the Shoulder Peaks on the High Energy Resolution N KL2,3L2,3 Auger Line Shape of TiN Extracted by Target Factor Analysis
T. Morohashi, T. Hoshi, K. Hirokawa, and M. Kudo・・・・78
XPS Photoelectron Profilography
G. Mladenov, K. Vutova, T. Tanaka, and K. Kawabata・・・・82
Si-L2,3 Soft X-ray Emission Spectra by Quantitative Analysis of Silicides/Si System: Simulation and Experiment
Kinoshita, M. Hirai, M. Kusaka, and M. Iwami・・・・86
Angular Distribution of Elastically Backscattered Electrons and the Depth of Electron Penetration
B. Gruzza, C. Robert, L. Bideux, B. Peuchot, and A. Jablonski・・・・90
Smoothing of Chemical Analysis Data by Neural Networks
T. Watanabe, S. Kishida, T. Kawai, K. Ishihara, H. Tokutaka, and S. Fukushima・・・・94
Common Data Processing System Version 5
K. Yoshihara・・・・98
Application of Self-Organizing Maps (SOM) to Chemical Data Analysis
H. Tokutaka, K. Yoshihara, K. Fujimura, K. Iwamoto, K. Obu-Cann, T. Watanabe, and S.Kishida・・・・102
Possibility of Determining Integration Boundaries of a Broad Peak using Only the Shirley Method
M. Jo・・・・106
Surface Analysis for the Process and Device Characterisation in Microelectronics Mnufacturing Plants
R. von Criegern, F. Jahnel, U. Scheithauer, S. Jenkins, and C. Luhmann・・・・110
Backside SIMS Analysis of Zinc Profiles in InGaAsP
Y. Kawashima, T. Ide, and K. Shimizu・・・・116
Investigation on Ga Contamination due to Dual Beam FIB for In-line Use
T. Sakata, Y. Iijima, S. Maeda, and T. Sekine・・・・120
Design of Double Multilayer Monochromator for TXRF Optics by using Ray-Tracing Simulation
T. Yamada, A. Nisawa, T. Shoji, and T. Utaka・・・・124
Boron Redistribution during Silicidation Process of Titanium-Silicon System
K. Yanagihara and S. Hayashi・・・・128
Depth Profiling Comparison between TOF-SIMS and Quadrupole SIMS at Near Surface Region
T. Hoshi, Li Zhanping, M. Tozu, and R. Oiwa・・・・132
Interface Effect in O2+-SIMS Depth Profiling of In1-xGaxAs1-yPy/InP Multilayer Samples
Y. Higashi, A. Masamoto, and Y. Homma・・・・136
In Situ Observation of Growing Film Surface by Reflection High-Energy Electron Diffraction Beam Excited Auger Electron Spectroscopy
H. Nonaka, T. Shimizu, S. Ichimura, and K. Arai・・・・140
Applications and Further Developments of Medium Energy Ion Scattering Spectroscopy for Surface and Interface Analysis
D. W. Moon, H. K. Kim, and H. J. Kang・・・・144
Three-Dimensional Microanalysis of Solid Materials using Ion and Electron Dual Focused Beam Apparatus
T. Sakamoto, Z. Cheng, M. Takahashi, Y. Kuramoto, M. Owari, and Y. Nihei・・・・150
Application of High Purity Ozone Beam to Charge Compensation in Surface Analysis by AES/XPS
S. Ichimura, I. Kameyama, H. Nonaka, and A. Kurokawa・・・・154
Background-Free Auger Spectra from the Surface Top-Layer Measured by Positron-Annihilation Induced Auger-Electron Spectroscopy
T. Ohdaira, R. Suzuki, and T. Mikado・・・・158
A Study of Charge Compensation for Insulator Samples in AES by Low Energy Ion Beam Irradiation
H. lwai, H. Namba, T. Morohashi, R. E. Negri, A. Ogata, T. Hoshi, and R. Oiwa・・・・161
Semiconductor Surface Analysis by Total Reflection X-ray Photoelectron Spectroscopy
Y. Iijima, K. Miyoshi, and S.Saito・・・・165
Amplification Stability of Channel Electron Multiplier for Residual Gas
A. Kurokawa・・・・169
Chemical State Analysis by Auger Microprobe with Hemispherical Energy Analyzer
Y. Sakai, M. Kudo, T. Yamada, N. Ikeo, and Y. Nagasawa・・・・173
Auger Electron Emission from Metals under Gallium Focused Ion Beam Bombardment
Z. Cheng, T. Sakamoto, M. Takahashi, Y. Kuramoto, M. Owari, and Y. Nihei・・・・177
Microarea Analysis using Auger Electrons Induced by Gallium Focused Ion Beam
Z. Cheng, T. Sakamoto, M. Takahashi, Y. Kuramoto, M. Owari, and Y. Nihei・・・・181
Depth Profiling of Arsenic Shallow Implants in Silicon Using Low Energy Cs Ion Beam on Quadrupole SIMS
J. Kinoshita, K. Siozawa, and T. Yamazaki・・・・185
Technical Proposal for Measurement of Sputtered Depth Using a Mesh - Especially for Auger Depth Profiling -
M. Suzuki, K. Mogi, and H. Ando・・・・188