Papers from 3rd lnternationaI Symposium on Advanced Physical Fields -- Fabrication of Nanostructures --
Atomic Assembly of Germanium on Silicon
I.Goldfarb and G.A.D.Briggs・・・・143
Atomic Manipulation and Atomic Scale Experiment on Si(111) Surface with STM
Hiroshi Tokumoto and Ryu Hasunuma・・・・148
Photon Emission STM Using Optical Fiber Bunches
C.Thirstrup M.Sakurai and M. Aono・・・・152
Electronwave Amplitude Oscillation during Tunneling due to Interference
H.Nejo, H.Hori and D.Baksheyev・・・・159
Formation and Manipulation of Semiconducting and Metallic Nanostructures
Lars Samuelson, Sven-Bertil Carlsson, Knut Deppert, Tobias Junno, Martin H.Magnusson, Lars Montelius and Hongqi Xu・・・・165
Man Made and Self Organized Nanostructures
L.F.Chi, T. Drechsler, St. Hoppener, S. Rakers, Ch. Rothig, Th. Schwaack, F. Starrberg and H Fuchs・・・・168
Toward Atom-Scale Silicon Electronics
J. R. Tucker and T.-C. Shen・・・・172
Self Organization of Molecular Patterns through Hydrogen Bonding
Toyoki Kunitake・・・・177
Germanium Nanostructures Deposited by the Cluster-beam Evaporation Technique
Shinji Nozaki, Seiichi Sato, Hiroshi Ono and Hiroshi Morisaki・・・・181
Self-Assembly and Self-Organization of Semiconductor Nanostructures
Jiro Temmyo and Toshiaki Tamamura・・・・185
Formation of Ultrathin Ordered Surface Phases by Segregation
Burkhard Eltester, Elmarie C.Viljoen and Christian Uebing・・・・192
Spontaneous Formation of Nanostructures at Metal-surfaces
S.Gestermann, P.Broekmann, M.Wilms and K.Wandelt・・・・199
NEXT: an Experimental Effort Towards Nanoelectronic Devices
L.J.Geerligs, Sven Rogge, George Palasantzas, Burghard llge, Paul Scholte and Jan de Nijs・・・・204
Ion Beam Processing of Nanocluster-containing Thin Films
C.M.Cotell, S.Schiestel, C.A.Carosella, R.M.Stroud, K.S.Grabowski and G.K.Hubler・・・・209
Formation of Metallic Ultrafine Particles in Silica Glass by Ion Implantation
Kohei Fukumi, Akiyoshi Chayahara, Kohei Kadono, Hiroyuki Kageyama, Naoyuki Kitamura, Hiroshi Mizoguchi, Yuji Horino and Masaki Makihara・・・・214
Fabrication of Metal Nanospheres and the Kinetics Controlled with High-flux Negative Ions and the Optical Properties
N.Kishimoto,V.T.Gritsyna,Y.Takeda and C.G.Lee・・・・220
Nanostructure Effects in Luminescent Materials
Paul H.Holloway and Sean L.Jones・・・・226
THZ Generation from Photoconductive Switches with Naonostructures
T.Itatani, K.Matsumoto and T.Nakagawa・・・・232
Room Temperature SET Effects in Nano-constricted Granular Films
S.E.Kubatkin, A.V.Danilov, A.L.Bogdanov, H.Olin and T.Claeson・・・・235
Surface Droplet Epitaxy for Fabrication of MetaUSemiconductor Bilayer Dots on Nanometer Scale
Yutaka Wakayama and Shun-ichiro Tanaka・・・・238
Selective Self-organization of InAs lslands on InGaAs/GaAs Buffer Layers
Koichi Yamaguchi, Tadahiro Hiraike and Fumito Hiwatashi・・・・242
Nano-Diamond Film Produced from CVD of Camphor
S.Chaudhuri, K.K.Chattopadhyay, K.Chakrabarti and A.K.Pal・・・・248
Oxidation Characteristics of Ge Nanocrystals Embedded in an SiO, Matrix
Shyama Rath, H.Ono, S.Nozaki and H.Morisaki・・・・251
Control of Size and Density of Self-organized Quantum Dots Grown on GaAs(311)B by Atomic Hydrogen-assisted Molecular Beam Epitaxy
K.Akahane, T.Kawamura, S.Lan, Y.Okada and M.Kawabe・・・・255
Effects of Post Annealing on Self-organized InAs Islands Grown on (OO1)GaP by Organometallic Vapor Phase Epitaxy
S.Fuchi, Y.Nonogaki, T.Iguchi, H.Moriya, Y.Fujiwara and Y.Takeda・・・・259
STM Atom Manipulation with Different Material Tips
D.H.Huang and M.Aono・・・・264
Atomic Force Microscopy and Raman Spectroscopy Study of Ge Quantum Dots Growth
Shulin Gu, Yi Shi, Jun Wu, Ning Jiang, Xunming Zhu, Peng Chen, Rong Zhang, Y.D.Zheng, Mu Wang, Xiaoyong Liu and Naiben Min・・・・268
Fabrication of GaN Nanostructure Using Metalorganic Chemical Vapor Deposition
B.Shen. P.Chen, M.Wang, Y.G.Zhou, Z.Z.Chen, L.Zhang and Y.D.Zheng・・・・273
Graphogrowth of Carbon Nanotubes by Chemical Vapor Deposition
Takayuki Arie, Seiji Akita and Yoshikazu Nakayama・・・・277
Preparation of Isotopically Controlled b -B105 Single Crystals by the Floating Zone Technique
N.Nogi, T.Hirano, K.Honda, S.Tanaka and T.Noda・・・・280
STM Induced Rotacion of Acetylene Molecules Adsorbed on Pd(111)
N.Mingo, M.Rose and M.Salmeron・・・・284
Fabrication and Structural Observation of Molybdenum and Indium Nanocrystals Deposited on Si(111)Thin Films by UHV-FE-TEM
Miyoko Tanaka, Masaki Takeguchi and Kazuo Furuya・・・・287
Nanostructural Effect on Photocurrent Multiplication in Semiconducting Molecular Crystals
Ken-ichi Sano and Masanori Watanabe・・・・291
On The Mechanism of Scanning Probe Microscope Tip-Induced Nano-Oxidation Process of GaAs
Yoshitaka Okada, Shinji Amano and Mitsuo Kawabe・・・・296
Formation of GaAs Quantum Dots by Low-Temperature Droplet Epitaxy
Chae-Deok Lee, Chanro Park, Hwack Joo Lee, S.J.Park, Kyu-Seok Lee, C.G.Park and S.K.Noh・・・・299
Direct Three-dimensional Characterization of Buried Interface Morphology with Quantized Electron Waves
lgor B. Altfeder and D. M. Chen・・・・303
Surface Structures and Growth Modes of Nd Deposited on Mo(110) Surface
S.Jo and Y.Gotoh・・・・307
Scanning Tunneling Microscopy of Atomic-scale Dangling-bond Structures Fabricated on the Si(100)-2 x 1-H Surface
T.Hitosugi, T.Hashizume, S.Heike, H.Kajiyama, Y.Wada, S.Watanabe, T.Hasegawa and K.Kitazawa・・・・312
Fabrication of Buried GaAIAs Microcrystal Structures by Droplet Epitaxy
Katsuyuki Watanabe and Nobuyuki Koguchi・・・・316
Advanced Substrate for Fabrication of Nanostructures with XHV Integrated Process
M.Tosa, A.Kasahara, A.Itakura and K.Yoshihara・・・・320
AFM Lithography with a Current-controlled Exposure System
M.Ishibashi, S.Heike, H.Kajiyama, Y.Wada and T.Hashizume・・・・324
Development of an Instrument for Surface Conductivity Measurements at um Scale Region in Ultra High Vacuum
Hiroshi Okamoto, Duncan Rogers, Hitoshi Nejo, Hiroyuki Mizuno and Toshihiko Nagamura・・・・328
Nickel Silicide Electrodes Pattern Fabricated by Resistless Electron-beam Lithography Process
H.Y.Sheng, D.Fujita, T.Ohgi, H.Okamoto and H.Nejoh・・・・331
On the Use of Pb as Intermediate Adsorbate for the In Situ Preparation of Ideal Si(111)-(1 x 1): H Templates
S.Odasso, L. Seehofer and R.L.Johnson・・・・334
Artificial Nanostructures Formed on Si(111)-(7 x 7)Surfaces with Ultrahigh Vacuum Scanning Tunneling Microscopy and their Electron Transport Characteristics
D.Fu.jita, Z.-C.Dong, H.-Y.Sheng and H.Nejoh・・・・340
Surface Structure of Initial Ag Deposition on Si(100) and Its Local Density of State
T.Yakabe, Z.-C.Dong and H.Nejoh・・・・346
Indium Segregation and its Influence to the Quantum Structures of InAs/GaAs Self-assembled Quantum Dots
Hong-Wen Ren, Mitsuru Sugisaki, Shigeo Sugou, Kenichi Nishi and Yasuaki Masumoto・・・・350
Self-Assembled Lead Chains on Si(100) and their I-V Characteristics
Zhen-Chao Dong, Taro Yakabe, Daisuke Fujita, Stephane Odasso and Hitoshi Nejoh・・・・355
Electron Transport in Four-Terminal Cross Junction with Potential Barrier in Magnetic Fields
Katsuki Amemiya・・・・360
Energy Loss Spectroscopy and Electron Microscopy of Photoluminescent P-type Porous Silicon Treated with NaOH Solution
Minghui Song, Wei Zhou, Yoshio Fukuda and Kazuo Furuya・・・・365
On-line Formation of Isotopically Controlled Si Films from Fluoro-Silane
Hiroshi Suzuki, Yutaka Takeuchi, Shinji Ito, Ichiro Shiota and Tetsuji Noda・・・・372
The Formation of Copper Clusters Embedded in Hydrogenated Amorphous Carbon: an X-ray Absorption Study
A.V.Kolobov, H.Oyanagi, S.G.Yastrebov, V.1.1vanov-Omskii and K.Tanaka・・・・377