Preface
Crossing InterfaceReview
Standardization of Secondary Ion Mass SpectrometryY.Homma・・・・350
Lecture
The bases of noise, S/N and Smoothing - IIISei FUKUSHIMA・・・・359
ORIGINAL Paper
The quantitative evaluation of sputtering rate and its application to measurement of recovering rate of segregated layer on film surfaceMichiko Yoshitake and Kazuhiro Yoshihara・・・・368
Properties of the secondary electron multiplier having a Faraday - cup capability
Y. Takeichi and K. Goto・・・・377
Relative Sensitivity Factors of Binary Chemical Semiconductor Materials and Silicon Oxide in AES Quantitative Analysis
Kadena Mogi and Mineharu Suzuki・・・・382
Study for SiO2 Film on Si(100) by X-ray Photoelectron Spectroscopy
Atsushi NISAWA, Kazuaki OKUDA・・・・392
Technical Report
Surface cleaning and Ar+ Radiation Damage of SiO2Makoto NAKAMURA, Satoru KISHIDA, Mineharu SUZUKI and Electronic Materials Group・・・・392
Checking tool for the information of the NPL format
Hiroshi NONOUE・・・・407
Report on the Electronics Material Group(EMG) Activities The influence of the ion sputtering on the AlGaAs, InGaAs surface
Toshiya OGIWARA, Hiroshi NONOUE・・・・412
Charge-up problem of SiO2 in AES spectra
Hisato Kusukami, Sei Fukushima, Electronics Material Group・・・・423
Charge compensation in SIMS
Y. Homma・・・・428
Some trials to reduce charging during AES analysis of insulating specimens
S. Ichimura・・・・430
Charge Compensation on the SEM Observation with Specimen Heating Method SEM observation of TiO2-Al203 Catalyst
K.Yoshida, T. Ogiwara, and S. Tanuma・・・・436
Q＆A
The Differentiation Procedure in the common Data Processing SystemKazuhiro Yoshihara・・・・463
National Research Institute for Metals Activity of SASJ Mailing Group "sasj" in Internet
JSA Editorial Board・・・・467
Preliminary TASSA Report
Surface Chemical Analysis-AES and XPS-Rough Outline of Experimental Variables to be Reviewed for Use in the Development of an "International Standard Procedure to Measure and Report Unavoidable Change(s) that Occor During XPS or AES Anlyses"(propose)B.V. Crist・・・・469
Tpics
Introduction to Glow Discharge Optical Emission SpectrometryShigeru Suzuki・・・・473
Chemical State Analysis by High Energy ResolutionAES
B.V. Crist・・・・475
Preliminary Results from High Energy Resolution AES and High Energy Resolution XPS Analyses of n-GaAs and Un-doped GaAs Wafers Fractured in Aie to Give(110) Surfaces and then Ion Etched in UHV.
B.V. Crist, F.Sakamoto, and M.Suzuki・・・・477
Sample Rotation in Sputter Depth Profiling
S. Hofmann・・・・482
Activity Report of SASJ
Report on Activity of Database CommitteeT. Sekine・・・・491
Minute of 6th meeting of Metal Materials Group
・・・・・・・・・・・・495
Report of 6th Meeting of Electronic Materials Group
M.Nakamura, H.Nonoue, and M.Suzuki・・・・496
Report of the ad-hoc meeting of Electronic Materials Group
T.Ogiwara, M.Nakamura, and M.Suzuki・・・・499
Information
Official Data-Input Form for Spectral DatabaseHiroshi Nonoue, Atsuko Kojima・・・・503